Anuraag Sharma

Graduating: Summer 2026 (B.Eng., Microelectronics)
Focus: PhD programs in physics / materials / computational science

This CV is deliberately incomplete without the rest of the site.


Contact

Email: anuraag.sharma22 [at] student.xjtlu.edu.cn
Phone: +1 (518) 937-2183
Status: U.S. Permanent Resident
Location: Taicang, China → TBD Fall 2026


Education

Xi’an Jiaotong–Liverpool University
B.Eng., Microelectronic Science and Engineering
Expected Summer 2026 (Direct Year 2 Entry)

University of Liverpool
B.Eng. (Hons), Microelectronic Science and Engineering
(Double Degree Program)

Note: My formal training is engineering-heavy. Most physics depth came from research-driven self-study prompted by model failures rather than coursework.


Research Experience

AlN electroabsorption under bias

XJTLU — School of CHIPS
Advisor: Assoc. Prof. Jangyong Kim | 2024–present

  • Studied field-dependent UV transmission in PEALD AlN thin films.
  • Tested crystalline electro-optic and free-carrier mechanisms against structural and spectral constraints.
  • Those mechanisms could not be supported by available data.
  • Defect-mediated electroabsorption remained consistent but not uniquely identifiable.
  • First project where I explicitly documented what the data could not determine.

Related: /case-studies/aln-electroabsorption
Constraints: /constraints/aln-electroabsorption


Optical transitions in doped g-C₃N₄

XJTLU — Chemistry & Materials Science
Advisor: Prof. Heechae Choi | 2024–present

  • Computed dielectric response and optical transitions using DFT.
  • Initially relied on single relaxed geometries; this proved insufficient.
  • Transition energies and selection rules depended strongly on local configuration.
  • Shifted to small-ensemble sampling after observing unstable optical conclusions.

Related: /case-studies/gcn-optical-transitions
Open issues: /constraints/gcn-optical-transitions


Industry Experience

Inverse optical metrology

KLA Corporation — Applications Engineering Intern
Summer 2025

  • Built an inverse RCWA pipeline mapping broadband reflectance to trench geometry.
  • Found trench depth to be reliably constrained; secondary parameters were not.
  • Reduced measurement time by narrowing the admissible parameter space rather than increasing model complexity.
  • Reinforced that identifiability matters more than model sophistication.

Related: /case-studies/inverse-rcwa
Limits: /constraints/inverse-rcwa


Publications

  1. S. Ji, H-Y. Ahn, M. Dreger, A. Sharma, et al.
    Mixing Anions in Metal Chalcogenides for Effective Band Gap Engineering with Temperature
    ACS Applied Optical Materials 2(8), 1559–1565 (2024)

  2. A. Sharma, W. Chen, A. Kandwal, C. C. Kit, J. Kim
    Electric Field-Induced Optical Effects in AlN Thin Films for Transparent Electronic Interfaces
    Scientific Reports — submitted (2026)


Tools & Methods (compressed)

  • Electronic structure: VASP (PBE, occasional HSE06)
  • Inverse modeling: RCWA
  • Computation: Slurm-based HPC clusters
  • Analysis: Python (NumPy, SciPy, ASE, Pandas, Matplotlib)
  • Characterization: XRD, SEM, AFM, IV–CV (primarily for exclusion, not confirmation)

Languages: English, Hindi; Chinese (HSK-4); French (intermediate)


Last updated: January 2026